2SA1837 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TRANSISTOR (POWER, DRIVER STAGE AMPLIFIER APPLICATIONS)

UTC 2SA1837 PNP EPITAXIAL SILICON TRANSISTOR
POWER AMPLIFIER
APPLICATIONS DRIVER STAGE
AMPLIFIER APPLICATIONS
FEATURES
* High Transition Frequency: f_T=70MH_Z (Typ.)
* Complementary to UTC 2SC4793
1
TO-220F
1: BASE 2: COLLECTOR 3: EMITTER
ABSOLUTE MAXIMUM RATINGS (Ta = 25℃)
PARAMETER
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Ta=25℃
TC=25℃
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
Junction Temperature
T_J
Storage Temperature Range
Tstg
RATINGS
-230
-230
-5
-1
-0.1
2.0
20
150
-55 ~ 150
UNIT
V
V
V
A
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃)
PARAMETER
SYMBOL TEST CONDITIONS
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base -Emitter Voltage
V_{(BR) CEO}
I_CBO
I_EBO
h_FE
V_{CE (sat)}
V_BE
I_C= -10mA, I_B=0
V_CB = -230V, I_E=0
V_EB= -5V, I_C=0
V_CE= -5V, I_C= -100mA
I_C= -500mA_, I_B= -50mA
V_CE= -5V, I_C= -500mA
Transition Frequency
Collector Output Capacitance
fT
V_CE= -10V, I_C= -100mA
Cob V_CB= -10V, I_C=0, f=1MHz
MIN
-230
100
TYP
70
30
MAX
-1.0
-1.0
320
-1.5
-1.0
UNIT
V
μA
μA
V
V
MHz
pF
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