2SA1774 Datasheet, PDF (1/3 Pages) ON Semiconductor – PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT

UTC 2SA1774 PNP EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE TRANSISTOR
FEATURES
* Excellent h_FE linearity
* Complements the UTC 2SC4617
MARKING
A5
2
1
3
SOT-523
1: EMITTER 2: BASE 3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
PARAMETER
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
V_CBO
V_CEO
V_EBO
I_C
P_C
Tj
Storage Temperature Range
Tstg
RATINGS
-60
-50
-6
-0.15
0.15
150
-55 ~ +150
UNIT
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-Base Breakdown Voltage
BV_CBO I_C = -50µA
-60
Collector-Emitter Breakdown Voltage BV_CEO I_C = -1mA
-50
Emitter-Base Breakdown Voltage
BV_EBO I_E = -50µA
-6
Collector Cutoff Current
I_CBO
V_CB= -60V
Emitter Cutoff Current
I_EBO
V_EB= -6V
DC Current Transfer Ratio
h_FE
V_CE= -6V, I_C= -1mA
120
Collector-Emitter Saturation Voltage V_{CE (sat)} I_C=-50mA, I_B=−5mA
Transition Frequency
f_T
V_CE= -12V, I_E=2mA, f=100MHz
Output Capacitance
C_ob V_CB= -12V, I_E=0A, f=1MHz
TYP
140
4.0
MAX
-0.1
-0.1
560
-0.5
5.0
UNIT
V
V
V
µA
µA
V
MHz
pF
CLASSIFICATION OF HFE1
RANK
Q
Range
120 ~ 270
R
180 ~ 390
S
270 ~ 560
UTC UNISONIC TECHNOLOGIES CO., LTD. 1
QW-R221-011,A