2SA1740 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – High-Voltage Driver Applications

UTC 2SA1740
PNP EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE DRIVER
APPLICATION
FEATURES
1
*High breakdown voltage.
*Excellent h_FE linearity.
SOT-89
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
SYMBOL
RATING
Collector-Base Voltage
VCBO
-400
Collector-Emitter Voltage
VCEO
-400
Emitter-Base Voltage
VEBO
-5
Collector Current
Ic
-200
Collector Current (PULSE)
Icp
-400
Collector Power Dissipation
Pc
1.3
Junction Temperature
Tj
150
Storage Temperature
TSTG
-55 ~ +150
UNIT
V
V
V
mA
mA
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collect-Base Breakdown Voltage
BVCBO IC= -10µA,IE=0
-400
Collect-Emitter Breakdown Voltage
BVCEO IC= -1mA,IB=0,RBE=∞
-400
Emitter-Base Breakdown Voltage
BVEBO IE= -10µA,IC=0
-5
Collector Cutoff Current
ICBO VCB= -300V,IE=0
Emitter Cutoff Current
IEBO VEB= -4V,IC=0
DC Current Transfer Ratio
hFE VCE= -10V, Ic= -50mA
60
Collect-Emitter Saturation Voltage
VCE(sat) IC= -50mA,IB= -5mA
Base-Emitter Saturation Voltage
VBE(sat) IC= -50mA,IB= -5mA
Output Capacitance
Cob VCB=-30V, f=1MHz
Reverse Transfer Capacitance
Cre VCB =-30V,f=1MHz
Gain-Bandwidth Product
fT
VCE= -30V,IC= -10mA
Turn-on Time
ton
See test circuit
Turn-off Time
toff
See test circuit
TYP
-0.8
5
4
70
0.25
5.0
MAX
-0.1
-0.1
200
-1.0
UNIT
V
V
V
µA
µA
V
V
pF
pF
MHz
µs
µs
UTC UNISONIC TECHNOLOGIES CO. LTD ¹
QW-R208-026,A