2SA1700_2 Datasheet, PDF (1/4 Pages) Unisonic Technologies – HIGH VOLTAGE DRIVER APPLICATION

UTC 2SA1700
PNP EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE DRIVER
APPLICATION
FEATURES
*High breakdown voltage.
*Excellent hFE linearity.
1
TO-252
1: BASE 2:COLLECTOR 3:EMITTER
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C)
PARAMETER
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
Ic
Collector Current (PULSE)
Icp
Collector Power Dissipation
Pc
Junction Temperature
Tj
Storage Temperature
Tstg
RATING
-400
-400
-5
-200
-400
1
10( Tc=25°C)
150
-55 ~ +150
UNIT
V
V
V
mA
mA
W
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-Base Breakdown Voltage
BVCBO IC= -10µA,IE=0
-400
Collector-Emitter Breakdown Voltage BVCEO IC= -1mA, IB=0, RBE=∞
-400
Emitter-Base Breakdown Voltage
BVEBO IE= -10µA,IC=0
-5
Collector Cutoff Current
ICBO VCB= -300V,IE=0
Emitter Cutoff Current
IEBO VEB= -4V,IC=0
DC Current Transfer Ratio
hFE VCE= -10V, Ic= -50mA
60
Collector-Emitter Saturation Voltage VCE(sat) IC= -50mA,IB= -5mA
Base-Emitter Saturation Voltage
VBE(sat) IC= -50mA,IB= -5mA
Output Capacitance
Cob VCB= -30V,f=1MHz
Reverse Transfer Capacitance
Cre VCB= -30V,f=1MHz
TYP
5
4
MAX
-0.1
-0.1
200
-0.8
-1.0
UNIT
V
V
V
µA
µA
V
V
pF
pF
UTC UNISONIC TECHNOLOGIES CO. LTD ¹
QW-R209-009,A