2SA1627A Datasheet, PDF (1/3 Pages) Unisonic Technologies – PNP EPITAXIAL SILICON TRANSISTOR

UTC2SA1627A PNPEPITAXIAL SILICON TRANSISTOR
PNP EPITAXIAL SILICON
TRANSISTOR
DESCRIPTION
The UTC 2SA1627A is designed for general purpose
amplifier and high speed switching applications.
FEATURES
*High voltage
*Low collector saturation voltage.
*High-speed switching
1
TO-126C
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C )
PARAMETER
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Power Dissipation
PC
Collector Current(DC)
Collector Current(PULSE)
Ic
Icp *¹
Junction Temperature
Tj
Storage Temperature
*¹ : PW≦10ms,Duty Cycle≦50%
TSTG
VALUE
-600
-600
-7.0
1.0
-1.0
-2.0
150
-55 to +150
UNIT
V
V
V
W
A
A
°C
°C
ELECTRICAL CHARACTERISTICS(Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector Cut-Off Current
ICBO
VCB= -600V,IE=0
Emitter Cut-Off Current
IEBO VEB= -7.0V,Ic=0
DC Current Gain
hFE1*² VCE= -5.0V,Ic= -0.1A
30
DC Current Gain
hFE2*² VCE= -5.0V,Ic= -0.5A
4
Collector-Emitter Saturation Voltage
VCE(sat)*² Ic= -0.3A,IB= -0.06A
Base-Emitter Saturation Voltage
VBE(sat)*² Ic= -0.3A,IB= -0.06A
Gain Bandwidth Product
fT
VCE= -10V, IE=0.1A
10
TYP
58
19
-0.28
-0.85
28
MAX
-10
-10
120
-1.5
-1.2
UNIT
µA
µA
V
V
MHz
UTC UNISONIC TECHNOLOGIES CO. LTD ¹
QW-R217-004,A