2SA1627 Datasheet, PDF (1/3 Pages) NEC – PNP SILICON TRANSISTOR(general purpose amplifier and high speed switching)

UTC2SA1627 PNPEPITAXIAL SILICON TRANSISTOR
PNP EPITAXIAL SILICON
TRANSISTOR
DESCRIPTION
The UTC 2SA1627 is designed for general purpose
amplifier and high speed switching applications.
FEATURES
*High voltage
*Low collector saturation voltage.
*High-speed switching
1
TO-126
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C )
PARAMETER
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Power Dissipation
PC
Collector Current(DC)
Collector Current(PULSE)
Ic
Icp *¹
Junction Temperature
Tj
Storage Temperature
*¹ : PW≦10ms,Duty Cycle≦50%
TSTG
VALUE
-600
-600
-7.0
1.0
-1.0
-2.0
150
-55 to +150
UNIT
V
V
V
W
A
A
°C
°C
ELECTRICAL CHARACTERISTICS(Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector Cut-Off Current
ICBO
VCB= -600V,IE=0
Emitter Cut-Off Current
IEBO VEB= -7.0V,Ic=0
DC Current Gain
hFE1*² VCE= -5.0V,Ic= -0.1A
30
DC Current Gain
hFE2*² VCE= -5.0V,Ic= -0.5A
5
Collector-Emitter Saturation Voltage
VCE(sat)*² Ic= -0.3A,IB= -0.06A
Base-Emitter Saturation Voltage
VBE(sat)*² Ic= -0.3A,IB= -0.06A
Gain Bandwidth Product
fT
VCE= -10V, IE=0.1A
10
TYP
58
19
-0.28
-0.85
28
MAX
-10
-10
120
-0.5
-1.2
UNIT
µA
µA
V
V
MHz
UTC UNISONIC TECHNOLOGIES CO. LTD ¹
QW-R204-010,B