2SA1300 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TRANSISTOR (STROBO FLASH MEDIUM POWER AMPLIFIER APPLICATIONS)

UTC 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR
SILICON PNP EPITAXAL TYPE
DESCRIPTION
*Strobo Flash Applications.
*Medium Power Amplifier Applications.
FEATURES
*High DC Current Gain and Excellent hFE Linearity.
*hFE(1)=140-600, (VCE= -1V,IC= -0.5A)
*hFE(2)=60(Min.),120(Typ.),(VCE= -1V,IC= -4A)
*Low Saturation Voltage
*VCE (sat)= -0.5V(Max.), (IC= -2A,IE= -50mA)
1
SOT-89
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulsed (Note)
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Note :Pulse Width= 10ms(Max.),Duty Cycle=30%(Max.)
1: Emitter 2: Collector 3:Base
SYMBOL
VCBO
VCES
VCEO
VEBO
Ic
lcP
IB
Pc
Tj
Tstg
RATIOS
-20
-20
-10
-6
-2
-5
-2
750
150
-55~150
UNIT
V
V
V
A
A
mW
°C
°C
ELECTRICAL CHARACTERISTICS (TA=25°C)
PARAMETER
SYMBOL TEST CONDITIONS
Collector-emitter breakdown voltage V(BR)CEO
IC=10mA, IB=0
Emitter-collector breakdown voltage V(BR)EBO
IE= -1mA, IC=0
Collector cut-off current
ICBO
VCE = -20V, IE =0
Emitter cut-off current
IEBO
VBE = -6V, IC =0
DC current Gain
hFE1
VCE= -1V, Ic=0.5A
hFE2
VCE= -1V, Ic= -4A
Collector-emitter saturation voltage VCE(sat)
Ic= -2A, IB= -50mA
Base-emitter voltage
VBE
VCE= -1V, Ic= -2A
Current gain bandwidth product
fT
VCE= -1V,Ic= -0.5A
Output capacitance
Cob
VCE= -10V, IE=0, f=1MHz
MIN TYP MAX UNIT
-10
-
-
V
-6
-
-
V
-
-
-100 nA
-
-
-100 nA
140
-
600
60 120
-
-
-0.2 -0.5
V
-
-0.83 -1.5
V
-
140
-
MHz
-
50
-
pF
CLASSIFICATIONS OF h_FE1
RANK
Y
GR
BL
UTC _{UNISONIC TECHNOLOGIES CO. LTD}
1
QW-R208-012,A