2SA1201 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

UTC2SA1201 PNP EPITAXIAL SILICON TRANSISTOR
SILICON PNP EPITAXIAL
TRANSISTOR
DESCRIPTION
The UTC 2SA1201 is designed for power amplifier and
voltage amplifier applications.
FEATURES
*High voltage: VCEO= -120V
*High transition frequency: f_T=120MHz(typ.)
*Pc=1 to 2 W(mounted on ceramic substrate)
1
SOT-89
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
Ic
Base Current
IB
Collector Power Dissipation
PC
PC*
Junction Temperature
Tj
Storage Temperature
TSTG
* : Mounted on cermic substrate( 250mm² × 0.8t )
1:EMITTER 2:COLLECTOR 3:BASE
VALUE
-120
-120
-5
-800
-160
500
1000
150
-55 ~ +150
UNIT
V
V
V
mA
mA
mW
mW
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector to emitter breakdown
V(BR)CEO Ic= -10mA, IB=0
-120
voltage
Emitter to Base breakdown voltage V(BR)EBO IE= -1mA, IC=0
-5
Collector cut-off current
I_CBO
VCB= -120V, I_E=0
Emitter cut-off current
I_EBO
VEB= -5V, I_C=0
DC Current Gain
h_FE
VCE= -5V, IC= -100mA
80
Collector to emitter saturation
VCE(sat) Ic= -500mA, IB= -50mA
voltage
Base to emitter voltage
VBE
VCE= -5V, IC= -100mA
Transition frequency
fT
VCE= -5V, Ic= -100mA
Collector output capacitance
Cob VCB= -10V, IE=0, f=1MHz
TYP
120
MAX
-0.1
-0.1
240
-1.0
-1.0
30
UNIT
V
V
µA
µA
V
V
MHz
pF
UTC UNISONIC TECHNOLOGIES CO. LTD ¹
QW-R208-024,A