2SA1020 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

UTC2SA1020 PNP EPITAXIAL SILICON TRANSISTOR
SILICON PNP EPITAXIAL
TRANSISTOR
DESCRIPTION
The UTC 2SA1020 is designed for power amplifier and
power switching applications.
FEATURES
*Low collector saturation voltage:
VCE(sat)=-0.5V(max.) (IC=-1A)
*High speed switching time: tstg=1.0µs(Typ.)
*Complement to UTC 2SC2655
1
SOT-89
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
Ic
Collector Power Dissipation
PC
Collector Power Dissipation
PC*
Junction Temperature
Tj
Storage Temperature
TSTG
* : Mounted on cermic substrate( 250mm² × 0.8t )
1:EMITTER 2:COLLECTOR 3:BASE
VALUE
-50
-50
-5
-2
0.5
1
150
-55 ~ +150
UNIT
V
V
V
A
W
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector cut-off current
Emitter cut-off current
Collector to emitter breakdown
I_CBO
I_EBO
V(BR)CEO
VCB=-50V, I_E=0
VEB=-5V, I_C=0
Ic=-10mA, IB=0
-50
voltage
DC Current Gain
Collector to emitter saturation
h_FE1
h_FE2
VCE(sat)
VCE=-2V, IC=-0.5A
70
VCE=-2V, IC=-1.5A
40
Ic=-1A, IB=-0.05A
voltage
Base to emitter saturation voltage
VBE(sat)
Ic=-1A, IB=-0.05A
Transition frequency
fT
VCE=-2V, Ic=-0.5A
Collector output capacitance
Cob
VCB=-10V, IE=0, f=1MHz
Switching time Turn-on time
ton
Storage time
tstg
Fall time
tf
TYP
100
40
0.1
1.0
0.1
MAX
-1.0
-1.0
240
-0.5
-1.2
UNIT
µA
µA
V
V
V
MHz
pF
µs
µs
µs
UTC UNISONIC TECHNOLOGIES CO. LTD ¹
QW-R208-021,A