English
Language : 

2N7002Z_15 Datasheet, PDF (1/4 Pages) Unisonic Technologies – N-CHANNEL ENHANCEMENT MODE POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD
2N7002Z
300mA, 60V N-CHANNEL
ENHANCEMENT MODE
POWER MOSFET
 DESCRIPTION
The UTC 2N7002Z uses advanced technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in
PWM applications.
 FEATURES
* RDS(ON) <7.5Ω
* Low Reverse Transfer Capacitance (CRSS = typical 3.0 pF)
* ESD Protected
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
 SYMBOL
3.Drain
Power MOSFET
2.Gate
1.Source
 ORDERING INFORMATION
Ordering Number
2N7002ZG-AE2-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
SOT-23-3
Pin Assignment
123
SGD
Packing
Tape Reel
 MARKING
CPLG
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 4
QW-R502-273.H