2N7002W_15 Datasheet, PDF(1/3 Page) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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2N7002W_15 Datasheet, PDF (1/3 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD

2N7002W

Preliminary

300mA, 60V N-CHANNEL

POWER MOSFET

ï® DESCRIPTION

The UTC 2N7002W uses advanced technology to provide

excellent RDS(ON), low gate charge and operation with low gate

voltages. This device is suitable for use as a load switch or in PWM

applications.

ï® FEATURES

* High Density Cell Design for Low RDS(ON).

* Voltage Controlled Small Signal Switch

* Rugged and Reliable

* High Saturation Current Capability

ï® SYMBOL

Power MOSFET

ï® ORDERING INFORMATION

Ordering Number

2N7002WG-AL3-R

Note: Pin Assignment: G: Gate D: Drain

S: Source

Package

SOT-323

Pin Assignment

Packing

Tape Reel

ï® MARKING

www.unisonic.com.tw

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