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2N7002T Datasheet, PDF (1/3 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |||
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UNISONIC TECHNOLOGIES CO., LTD
2N7002T
Preliminary
300 mAmps, 60 Volts
N-CHANNEL POWER MOSFET
 DESCRIPTION
The UTC 2N7002T has been designed to minimize on-state
resistance while provide rugged, reliable, and fast switching
performance. It can be used in most applications requiring up to
400mA DC and can deliver pulsed currents up to 2A. The product
is particularly suited for low voltage, low current applications, such
as small servo motor control, power MOSFET gate drivers, and
other switching applications
 FEATURES
* High Density Cell Design for Low RDS(ON).
* Voltage Controlled Small Signal Switch
* Rugged and Reliable
* High Saturation Current Capability
 SYMBOL
Power MOSFET
 ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2N7002TL-AN3-R
2N7002TG-AN3-R
Package
SOT-523
Pin Assignment
1
2
3
S
G
D
Packing
Tape Reel
 MARKING
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
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QW-R502-542.a
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