2N7000 Datasheet, PDF (1/5 Pages) Motorola, Inc – CASE 29-04, STYLE 22 TO-92 (TO-226AA)

UTC 2N7000
MOSFET
N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT
TRANSISTOR
DESCRIPTION
The UTC 2N7000 has been designed to minimize
on-state resistance while provide rugged, reliable, and fast
switching performance. It can be used in most applications
requiring up to 400mA DC and can deliver pulsed currents
up to 2A. The product is particularly suited for low voltage,
low current applications such as small servo motor control,
power MOSFET gate drivers, and other switching
applications
FEATURES
*High density cell design for low RDS(ON)
*Voltage controlled small signal switch
*Rugged and reliable
*High saturation current capability
1
TO-92
1: SOURCE 2: GATE 3: DRAIN
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C )
PARAMETER
SYMBOL
Drain-Source Voltage
Drain-Gate Voltage(RGS≤1MΩ)
VDSS
VDGR
Gate -Source Voltage-Continuous
-Non Repetitive (tp<50µs)
VGSS
Maximum Drain Current-Continuous
ID
-Pulsed
Maximum Power Dissipation
PD
Derated above 25°C
Operating and Storage Temperature Range
TJ,TSTG
Maximum Lead Temperature for Soldering Purposes, 1/16” from Case
TL
for 10 Seconds
RATINGS
60
60
±20
±40
115
800
400
3.2
-55 to +150
300
UNIT
V
V
V
mA
mW
mW/°C
°C
°C
THERMAL CHARACTERISTICS
PARAMETER
Thermal Resistance, Junction-to-Ambient
SYMBOL RATINGS
RθJA
312.5
UNIT
°C/W
UTC UNISONIC TECHNOLOGIES CO., LTD. ¹
QW-R201-064,A