2N60_12 Datasheet, PDF (1/6 Pages) Unisonic Technologies – 2A, 600V N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD
2N60
Power MOSFET
2A, 600V N-CHANNEL POWER
MOSFET
„ DESCRIPTION
The UTC 2N60 is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching time,
low gate charge, low on-state resistance and have a high rugged
avalanche characteristics. This power MOSFET is usually used at
high speed switching applications in power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
„ FEATURES
* R_DS(ON) = 5Ω@V_GS = 10V
* Ultra Low gate charge (typical 9.0nC)
* Low reverse transfer capacitance (C_RSS = typical 5.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
„ SYMBOL
1
1
TO-220
TO-220F
1
1
TO-220F1
TO-262
1
TO-251
1
TO-252
1
1
TO-126
TO-251L
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2N60L-TA3-T
2N60G-TA3-T
2N60L-TF1-T
2N60G-TF1-T
2N60L-TF3-T
2N60G-TF3-T
2N60L-TM3-T
2N60G-TM3-T
2N60L-TMA-T
2N60G-TMA-T
2N60L-TN3-R
2N60G-TN3-R
2N60L-TN3-T
2N60G-TN3-T
2N60L-T2Q-T
2N60G-T2Q-T
2N60L-T60-K
2N60G-T60-K
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F1
TO-220F
TO-251
TO-251L
TO-252
TO-252
TO-262
TO-126
Pin Assignment
123
GDS
GDS
GDS
GDS
GDS
GDS
GDS
GDS
GDS
Packing
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Copyright © 2012 Unisonic Technologies Co., Ltd
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QW-R502-053.P