2N60_11 Datasheet, PDF (1/6 Pages) Unisonic Technologies – 2 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD
2N60
Power MOSFET
2 Amps, 600/650 Volts
N-CHANNEL POWER MOSFET
„ DESCRIPTION
The UTC 2N60 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
„ FEATURES
* R_DS(ON) = 5Ω@V_GS = 10V
* Ultra Low gate charge (typical 9.0nC)
* Low reverse transfer capacitance (C_RSS = typical 5.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
„ SYMBOL
1
1
TO-220
TO-220F
1
1
TO-220F1
TO-262
1
TO-251
1
TO-252
1
1
TO-126
TO-251L
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2N60L-x-TA3-T
2N60G-x-TA3-T
2N60L-x-TF1-T
2N60G-x-TF1-T
2N60L-x-TF3-T
2N60G-x-TF3-T
2N60L-x-TM3-T
2N60G-x-TM3-T
2N60L-x-TMA-T
2N60G-x-TMA-T
2N60L-x-TN3-R
2N60G-x-TN3-R
2N60L-x-T2Q-T
2N60G-x-T2Q-T
2N60L-x-T60-K
2N60G-x-T60-K
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F1
TO-220F
TO-251
TO-251L
TO-252
TO-262
TO-126
Pin Assignment
123
GDS
GDS
GDS
GDS
GDS
GDS
GDS
GDS
Packing
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