2N3055 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(15A,50V,115W)

UTC 2N3055
SILICON NPN TRANSISTOR
SILICON NPN TRANSISTORS
The UTC 2N3055 is a silicon NPN transistor in TO-3
metal case. It is intended for power switching circuits,
series and shunt regulators, output stages and high fidelity
amplifiers.
TO-3
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETERS
SYMBOL
VALUE
Collector-Base Voltage
VCBO
100
Collector-Emitter Voltage
VCEO
60
Emitter-Base Voltage
VEBO
7
Collector-Emitter Voltage
VCEV
70
Collector Current
Ic
15
Collector Peak Current(1)
ICM
15
Base Current
IB
7
Base Peak Current(1)
IBM
15
Total Dissipation at Ta=25°C
Ptot
115
Storage Temperature
TSTG
-65 to 200
Max. Operating Junction Temperature
Tj
200
UNITS
V
V
V
V
A
A
A
A
W
°C
°C
ELECTRICAL CHARACTERISTICS(Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Collector-Emitter Sustaining
VCEO(sus)
Ic=200mA, IB=0V
60
Voltage
Collector-Emitter Sustaining Voltage VCER(sus)
Ic=0.2 A, RBE=100 Ohms
70
Collector Cut-off Current
ICEO
VCE=30V,IB=0
Collector Cut-off Current
ICEX
VCE=100V,VBE(off)=1.5V.
VCE=100V,VBE(off)=1.5V,
Ta=150°C
Emitter Cut-off Current
IEBO
VBE=7V,IC=0
ON CHARACTERISTICS
DC Current Gain(note)
hFE
Ic=4A,VCE=4V,
20
Ic=10A,VCE=4V
5
Collector-Emitter Saturation Voltage VCE(sat)
Ic=4A,IB=400mA
Ic=10A,IB=3.3A
TYP
MAX
0.7
1.0
5.0
5.0
70
1.1
3.0
UNIT
V
V
mA
mA
mA
V
UTC UNISONIC TECHNOLOGIES CO. LTD ¹
QW-R205-003,A