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| 1N65_15 Datasheet, PDF (1/7 Pages) Unisonic Technologies – N-CHANNEL POWER MOSFET | |||
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UNISONIC TECHNOLOGIES CO., LTD
1N65
1.2A, 650V N-CHANNEL
POWER MOSFET
ï® DESCRIPTION
The UTC 1N65 is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and high rugged
avalanche characteristics. This power MOSFET is usually used in
the high speed switching applications of power supplies, PWM
motor controls, high efficient DC to DC converters and bridge
circuits.
ï® FEATURES
* RDS(ON) <12.5⦠@ VGS=10V, ID=0.6A
* Ultra Low gate charge (typical 5.0nC)
* Low reverse transfer capacitance (CRSS = typical 3.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
ï® SYMBOL
Power MOSFET
1
1
SOT-223
TO-92
1
1
TO-220
TO-220F
1
TO-251
1
TO-251L
1
1
TO-252
1
TO-126
DFN-8(5x6)
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 7
QW-R502-579.E
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