1N60Z_15 Datasheet, PDF (1/7 Pages) Unisonic Technologies – N-CHANNEL ENHANCEMENT MODE

UNISONIC TECHNOLOGIES CO., LTD
1N60Z
1.2A, 600V N-CHANNEL
POWER MOSFET
 DESCRIPTION
The UTC 1N60Z is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and high rugged avalanche
characteristics. This power MOSFET is usually used at high
speed switching applications in power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
 FEATURES
* R_DS(ON) <11.5Ω@ V_GS=10V, I_D=0.6A
* Ultra Low gate charge (typical 5.0nC)
* Low reverse transfer capacitance (C_RSS = typical 3.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
 SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
 ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
-
1N60ZG-AA3-R
1N60ZL-T92-B
1N60ZG-T92-B
1N60ZL-T92-K
1N60ZG-T92-K
1N60ZL-TN3-R
1N60ZG-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
SOT-223
TO-92
TO-92
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tape Reel
Tape Box
Bulk
Tape Reel
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