1N60P Datasheet, PDF (1/6 Pages) Semtech Corporation – POINT CONTACT GERMANIUM DIODE

UNISONIC TECHNOLOGIES CO., LTD
1N60P
1.2A, 600V N-CHANNEL
POWER MOSFET
„ DESCRIPTION
The UTC 1N60P is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and a high rugged
avalanche characteristic. This power MOSFET is usually used at
high speed switching applications of power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
„ FEATURES
* R_DS(ON) =11.5Ω@V_GS = 10V.
* Ultra Low gate charge (typical 5.0nC)
* Low reverse transfer capacitance (C_RSS = typical 3.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
„ SYMBOL
Power MOSFET
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
1N60PL-T92-B
1N60PG-T92-B
TO-92
1N60PL-T92-K
1N60PG-T92-K
TO-92
1N60PL-T92-R
1N60PG-T92-R
TO-92
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tape Box
Bulk
Tape Reel
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