1N60A Datasheet, PDF(1/8 Page) Microsemi Corporation – Optimized for Radio Frequency Response

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1N60A Datasheet, PDF (1/8 Pages) Microsemi Corporation – Optimized for Radio Frequency Response

UNISONIC TECHNOLOGIES CO., LTD

1N60A

0.5 Amps,600 Volts

N-CHANNEL MOSFET

Power MOSFET

DESCRIPTION

The UTC 1N60A is a high voltage MOSFET and is designed to

have better characteristics, such as fast switching time, low gate

charge, low on-state resistance and have a high rugged avalanche

characteristics. This power MOSFET is usually used at high speed

switching applications in power supplies, PWM motor controls, high

efficient DC to DC converters and bridge circuits.

FEATURES

* RDS(ON) =11â¦@VGS = 10V.

* Ultra Low gate charge (typical 8.0nC)

* Low reverse transfer capacitance (CRSS = 3.0 pF(max))

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness

SYMBOL

2.Drain

TO-92

*Pb-free plating product number: 1N60AL

1.Gate

3.Source

ORDERING INFORMATION

Order Number

Normal

Lead Free Plating

Package

1N60A-T92-B

1N60AL-T92-B

TO-92

1N60A-T92-K

1N60AL-T92-K

TO-92

1N60A-T92-R

1N60AL-T92-R

TO-92

Note: Pin Assignment: G: Gate D: Drain S: Source

Pin Assignment

Packing

Tape Box

Bulk

Tape Reel

1N60AL-T92-B

(1)Packing Type

(2)Package Type

(3)Lead Plating

(1) B: Tape Box, K: Bulk, R: Tape Reel

(2) T92: TO-92

(3) L: Lead Free Plating, Blank: Pb/Sn

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