1N4148 Datasheet, PDF (1/4 Pages) NXP Semiconductors – High-speed diodes

UTC 1N4148
HIGH-SPEED SWITCHING DIODE
DESCRIPTION
The UTC 1N4148 is designed for high-speed switching
application in hybrid thick-and thin-film circuits. The
devices is manufactured by the silicon epitaxial planar
process and packed in plastic surface mount package.
FEATURES
* Ultra-high Speed
* Low Forward Voltage
* Fast Reverse Recovery Time
DIODE
2
1
3
SOT-23
2
1
3
SOT-323
1
21
2
SOD-123
SOD-323
SOT-23, SOT-323: 1:NC 2:Anode 3:Cathode
SOD-123, SOD-323: 1:Anode 2:Cathode
*Pb-free plating product number:1N4148L
ABSOLUTE MAXIMUM RATINGS (Ta=25℃, unless otherwise noted.)
PARAMETER
SYMBOL
RATINGS
UNIT
Maximum Repetitive Reverse Voltage
VRRM
100
V
Average Rectified Forward Current
IF (AV)
200
mA
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
IFSM
1.0
A
Pulse Width = 1.0 microsecond
4.0
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
PD
500
mW
Tj
175
℃
Tstg
-65 ~ +200
℃
NOTES:
(1) These ratings are based on a maximum junction temperature of 200℃.
(2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
THERMAL CHARACTERISTICS
CHARACTERISTIC
Thermal Resistance, Junction to Ambient
SYMBOL
RθJA
RATINGS
300
UNIT
℃/W
UTC UNISONIC TECHNOLOGIES CO., LTD. 1
QW-R601-001,C