19N10 Datasheet, PDF (1/6 Pages) Unisonic Technologies – 100V N-Channel MOSFET

UNISONIC TECHNOLOGIES CO., LTD
19N10
Preliminary
100V N-Channel MOSFET
Power MOSFET
„ DESCRIPTION
The UTC 100V N-Channel enhancement mode power field
effect transistors (MOSFET) are produced by UTC’s planar stripe,
DMOS technology which has been tailored especially in the
avalanche and commutation mode to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulse. They are suited for low voltage
applications such as audio amplifier, high efficiency switching
DC/DC converters, and DC motor control.
„ FEATURES
* R_DS(ON) = 0.1Ω @V_GS = 10 V
* Ultra low gate charge ( typical 19nC )
* Low reverse transfer Capacitance ( C_RSS = typical 32pF )
* Fast switching capability
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness
„ SYMBOL
2.Drain
Lead-free: 19N10L
Halogen-free: 19N10G
1.Gate
3.Source
„ ORDERING INFORMATION
Normal
19N10-TM3-T
Ordering Number
Lead Free
19N10L-TM3-T
Halogen Free
19N10G-TM3-T
Package
TO-251
Pin Assignment
1
2
3
GDS
Packing
Tube
www.unisonic.com.tw
Copyright © 2008 Unisonic Technologies Co., Ltd
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