18T10 Datasheet, PDF(1/3 Page) Unisonic Technologies – N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

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18T10 Datasheet, PDF (1/3 Pages) Unisonic Technologies – N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD

18T10

Preliminary

9A, 100V N-CHANNEL

ENHANCEMENT MODE

POWER MOSFET

Power MOSFET

ï® DESCRIPTION

The UTC 18T10 is an N-channel enhancement mode Power

MOSFET, it uses UTCâs advanced technology to provide the

customers with a minimum on state resistance, high switching speed

and low gate charge, etc.

The UTC 18T10 is suitable for low voltage applications such as

DC/DC converters, etc.

ï® FEATURES

* RDS(ON)<0.16â¦ @ VGS=10V

* High switching speed

* Low gate charge

ï® SYMBOL

ï® ORDERING INFORMATION

Ordering Number

Lead Free

Halogen Free

18T10L-TN3-T

18T10G-TN3-T

18T10L-TN3-R

18T10G-TN3-R

Note: Pin Assignment: G: Gate D: Drain S: Source

Package

TO-252

Pin Assignment

Packing

Tube

Tape Reel

www.unisonic.com.tw

1 of 3

QW-R52-A54.a

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