18N60_15 Datasheet, PDF (1/4 Pages) Unisonic Technologies – N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD
18N60
18A,600V N-CHANNEL
POWER MOSFET
 DESCRIPTION
The UTC 18N60 uses UTC’s advanced proprietary, planar
stripe, DMOS technology to provide excellent R_DS(ON), low gate
charge and operation with low gate voltages. This device is
suitable for use as a load switch or in PWM applications.
 FEATURES
* R_DS(ON) ≤ 0.5Ω @ V_GS=10V, I_D=9A
* Ultra Low Gate Charge ( Typical 50nC )
* Low Reverse Transfer Capacitance ( C_RSS = Typical 23pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
 SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
 ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
18N60L-T3P-T
18N60G-T3P-T
18N60L-T47-T
18N60G-T47-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-3P
TO-247
Pin Assignment
1
2
3
GDS
GDS
Packing
Tube
Tube
 MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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