18N60 Datasheet, PDF (1/3 Pages) Unisonic Technologies – POLARHV HIPERFET POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD
18N60
Preliminary
POLARHV HIPERFET POWER
MOSFET
Power MOSFET
„ DESCRIPTION
The UTC 18N60 uses UTC’s advanced proprietary, planar
stripe, DMOS technology to provide excellent R_DS(ON), low gate
charge and operation with low gate voltages. This device is
suitable for use as a load switch or in PWM applications.
„ FEATURES
* R_DS(ON) ≤ 400mΩ @V_GS = 10 V
* Ultra low gate charge ( typical 50nC )
* Low reverse transfer capacitance ( C_RSS = typical 23pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
„ SYMBOL
2.Drain
1
TO-247
Lead-free: 18N60L
Halogen-free : 18N60G
1.Gate
3.Source
„ ORDERING INFORMATION
Normal
18N60-T47-T
Ordering Number
Lead Free
18N60L-T47-T
Halogen Free
18N60G-T47-T
Package
TO-247
Pin Assignment
123
GDS
Packing
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Copyright © 2008 Unisonic Technologies Co., Ltd
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