15N06 Datasheet, PDF (1/6 Pages) Unisonic Technologies – N -CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD
15N06
N -CHANNEL ENHANCEMENT
MODE LOW THRESHOLD
POWER MOS TRANSISTOR
„ DESCRIPTION
The UTC 15N06 uses advanced trench technology to provide
excellent R_DS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in PWM
applications.
„ FEATURES
* R_DS(ON)<100mΩ @V_GS=5V, I_D=7.5A
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
„ SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
15N06L-TA3-T
15N06G-TA3-T
15N06L-TF3-T
15N06G-TF3-T
15N06L-TN3-R
15N06G-TN3-R
Package
TO-220
TO-220F
TO-252
Pin Assignment
1
2
3
GDS
GDS
GDS
Packing
Tube
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
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QW-R502-260.C