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| 12NN10_15 Datasheet, PDF (1/3 Pages) Unisonic Technologies – DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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UNISONIC TECHNOLOGIES CO., LTD
12NN10
Preliminary
DUAL N-CHANNEL
ENHANCEMENT MODE POWER
MOSFET
ï® DESCRIPTION
The UTC 12NN10 is a dual N-Channel enhancement mode power
MOSFET, it provides designer with fast switching speed, ruggedized
device design, low on-resistance and cost-effectiveness.
ï® FEATURES
* Low Gate Charge (Typically 10nC)
* 2.5A, 100V, 150m⦠@ VGS=10V
* Fast Switching Speed
* Simple Drive Requirement
ï® SYMBOL
Power MOSFET
SOP-8
ï® ORDERING INFORMATION
Ordering Number
12NN10G-S08-R
Note: Pin Assignment: G: Gate D: Drain
Package
SOP-8
S: Source
Pin Assignment
1 2 3 4 5, 6 7, 8
S1 G1 S2 G2 D2 D1
Packing
Tape Reel
12NN10G-S08-R
(1)Packing Type
(1) R: Tape Reel
(2)Package Type
(2) S08: SOP-8
(3)Green Package
(3) G: Halogen Free and Lead Free
ï® MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 3
QW-R502-506.b
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