12N60_15 Datasheet, PDF(1/8 Page) Unisonic Technologies

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12N60_15 Datasheet, PDF (1/8 Pages) Unisonic Technologies – N-CHANNEL JUNCTION FET

UNISONIC TECHNOLOGIES CO., LTD

12N60

12A, 600V N-CHANNEL

POWER MOSFET

ï® DESCRIPTION

The UTC 12N60 are N-Channel enhancement mode power

field effect transistors (MOSFET) which are produced using

UTCâs proprietary, planar stripe, DMOS technology.

These devices are suited for high efficiency switch mode

power supply. To minimize on-state resistance, provide superior

switching performance, and withstand high energy pulse in the

avalanche and commutation mode the advanced technology has

been especially tailored.

ï® FEATURES

* RDS(ON) < 0.8â¦ @VGS = 10 V

* Ultra low gate charge ( typical 42 nC )

* Low reverse transfer capacitance ( CRSS = typical 25 pF )

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness

ï® SYMBOL

Power MOSFET

ï® ORDERING INFORMATION

Ordering Number

Lead Free

Halogen Free

12N60L-TA3-T

12N60G-TA3-T

12N60L-TF1-T

12N60G-TF1-T

12N60L-TF2-T

12N60G-TF2-T

12N60L-TF3-T

12N60G-TF3-T

12N60L-T2Q-T

12N60G-T2Q-T

12N60L-T3P-T

12N60G-T3P-T

Note: Pin Assignment: G: Gate D: Drain S: Source

Package

TO-220

TO-220F1

TO-220F2

TO-220F

TO-262

TO-3P

Pin Assignment

GDS

Packing

Tube

www.unisonic.com.tw

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QW-R502-170.K

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