English
Language : 

12N60_12 Datasheet, PDF (1/7 Pages) Unisonic Technologies – 12A, 600V N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD
12N60
12A, 600V N-CHANNEL
POWER MOSFET
1
„ DESCRIPTION
The UTC 12N60 are N-Channel enhancement mode power
1
field effect transistors (MOSFET) which are produced using UTC’s
proprietary, planar stripe, DMOS technology.
These devices are suited for high efficiency switch mode
power supply. To minimize on-state resistance, provide superior
switching performance, and withstand high energy pulse in the
1
avalanche and commutation mode the advanced technology has
been especially tailored.
„ FEATURES
* RDS(ON) = 0.8Ω @VGS = 10 V
1
* Ultra low gate charge ( typical 42 nC )
* Low reverse transfer capacitance ( CRSS = typical 25 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
„ SYMBOL
2.Drain
Power MOSFET
TO-220
TO-220F
TO-220F1
TO-262
1.Gate
3.Source
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
12N60L-TA3-T
12N60G-TA3-T
12N60L-TF1-T
12N60G-TF1-T
12N60L-TF3-T
12N60G-TF3-T
12N60L-T2Q-T
12N60G-T2Q-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F1
TO-220F
TO-262
Pin Assignment
123
GDS
GDS
GDS
GDS
Packing
Tube
Tube
Tube
Tube
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
1 of 7
QW-R502-170.I