11N60K-MT Datasheet, PDF (1/6 Pages) Unisonic Technologies – N-CHANNEL DEPLETION-MODE POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD
11N60K-MT
Preliminary
11A, 600V N-CHANNEL
POWER MOSFET
 DESCRIPTION
The UTC 11N60K-MT is an N-channel enhancement mode
power MOSFET. It uses UTC advanced planar stripe, DMOS
technology to provide customers perfect switching performance,
minimal on-state resistance. It also can withstand high energy pulse
in the avalanche and commutation mode.
The UTC 11N60K-MT is universally applied in electronic lamp
ballasts based on half bridge topology, high efficiency switched
mode power supplies, active power factor correction, etc.
 FEATURES
* R_DS(ON) < 1.00 Ω @ V_GS = 10 V, I_D = 5.5 A
* Fast Switching
* With 100% Avalanche Tested
 SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
 ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
11N60KL-TF2-T
11N60KG-TF2-T
TO-220F2
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
1
2
3
G
D
S
Packing
Tube
 MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-A99.c