10N70-C Datasheet, PDF(1/6 Page) Unisonic Technologies – N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

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10N70-C Datasheet, PDF (1/6 Pages) Unisonic Technologies – N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD

10N70-C

10A, 700V N-CHANNEL

POWER MOSFET

ï® DESCRIPTION

The UTC 10N70-C is a high voltage and high current power

MOSFET, designed to have better characteristics, such as fast

switching time, low gate charge, low on-state resistance and have a

high rugged avalanche characteristics. This power MOSFET is

usually used at high speed switching applications in power supplies,

PWM motor controls, high efficient DC to DC converters and bridge

circuits.

ï® FEATURES

* RDS(ON) <0.86â¦@VGS =10V

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability

ï® SYMBOL

Power MOSFET

ï® ORDERING INFORMATION

Ordering Number

Lead Free

Halogen Free

Package

10N70L-TF3-T

10N70G-TF3-T

TO-220F

Note: Pin Assignment: G: Gate D: Drain S: Source

Pin Assignment

Packing

Tube

ï® MARKING INFORMATION

PACKAGE

TO-220

MARKING

www.unisonic.com.tw

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QW-R502-A80.A

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