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| 10N60Z-Q Datasheet, PDF (1/6 Pages) Unisonic Technologies – N-CHANNEL JUNCTION FET | |||
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UNISONIC TECHNOLOGIES CO., LTD
10N60Z-Q
Preliminary
10A, 600V N-CHANNEL
POWER MOSFET
 DESCRIPTION
The UTC 10N60Z-Q is a high voltage and high current power
MOSFET, designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and have
a high rugged avalanche characteristics. This power MOSFET is
usually used at high speed switching applications in power
supplies, PWM motor controls, high efficient DC to DC converters
and bridge circuits.
 FEATURES
* RDS(ON) < 0.8â¦@VGS =10V
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
 SYMBOL
Power MOSFET
 ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
10N60ZL-TF1-T
10N60ZG-TF1-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F1
Pin Assignment
1
2
3
G
D
S
Packing
Tube
 MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 7
QW-R502-B05.a
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