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MID-30H22 Datasheet, PDF (2/2 Pages) Unity Opto Technology – T-1 PACKAGE NPN PHOTOTRANSISTOR
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MID-30H22
Optical-Electrical Characteristics
Parameter
Test Conditions
Collector-Emitter
Ic=0.1mA
Breakdown Voltage
Ee=0
Emitter-Collector
Ie=0.1mA
Breakdown Voltage
Ee=0
Collector-Emitter
Saturation Voltage
Ic=0.5mA
Ee=0.1mW/cm2
Rise Time
Fall Time
Collector Dark
VCC =5V, RL=1KΩ
IC=1mA
VCE=10V
Current
Ee=0
On State Collector
Current
VCE=5V
Ee=0.1mW/cm2
Symbol Min.
V(BR)CEO
30
V(BR)ECO
5
VCE(SAT)
Tr
Tf
ICEO
IC(ON)
Typ .
Max.
@ TA=25oC
Unit
V
V
0.4
V
15
µS
15
100
nA
2
mA
Typical Optical-Electrical Characteristic Curves
1000
100
10
1
0.1
0.01
0.001
0 40 80 120
TA- Ambient Temperature -oC
FIG.1 COLLECTOR DARK CURRENT
VS AMBIENT TEMPERATURE
200
Vcc = 5 V
160 VRL= 1 V
F = 100 Hz
120 PW = 1 ms
80
40
0
0 2 4 6 8 10
RL - Load Resistance - KΩ
FIG.3 RISE AND FALL TIME
VS LOAD RESISTANCE
100%
90%
80%
70%
60%
50%
40%
30%
20%
10%
0%
600 700 800 900 1000
Wavelength-nm
FIG.5 RELATIVE SPECTRAL SENSITIVITY
VS. WAVELENGTH
4.0
3.5 Vce = 5 V
Ee = 0.1
3.0 mW/cm2
2.5 λ
2.0
1.5
1.0
0.5
0.0
-75 -25 25 75 125
TA - Ambient Temperature - oC
FIG.2 NORMALIZED COLLECTOR CURRENT
VS AMBIENT TEMPERATURE
10
Vce = 5 V
8
6
4
2
0
0 0.1 0.2 0.3 0.4 0.5 0.6
Ee - Irradiance - mW/cm2
FIG.4 RELATIVE COLLECTOR CURRENT
VS IRRADIANCE
0° 10° 20°
30°
40°
1.
50°
0
60°
0.
70
9
80°
90°
0.5 0.3 0.1 0.2 0.4 0.6
FIG.6 SENSITIVITY DIAGRAM
Unity Opto Technology Co., Ltd.
02/04/2002