MIR-3306-TC11 Datasheet, PDF (1/9 Pages) Unity Opto Technology – SMD Type Reflective Photo Sensor Subminiature Photointerrupter

SMD Type Reflective Photo Sensor
Subminiature Photointerrupter
Description
The MIR-3306-TC11 consists of a Gallium Arsenide
infrared emitting diode and a NPN silicon phototran-
sistor built in a black plastic housing. It is a refl-
ective subminiature photointerrupter.
Package Dimensions
MIR-3306-TC11
Unit: mm
Features
Compact and thin
MIR-3306-TC11 : Compact DIP, SMD type
Optimum detecting diatance : 0.8 - 1.0 mm
Wavelength : 940nm
Visible light cut-off type
NOTE:
(1).Tolerance:±0.2mm
(2). ( ) Reference dimensions
Item
Lead Material
Mold Material
Content
The Cu System
Inner: Epoxy Resin
Outer:PPA
Absolute Maximum Ratings
Parameter
Symbol Minimum Rating Maximum Rating
Continuous Forward Current
I_F
-
50
INPUT Reverse Voltage
V_R
-
5
Power Dissipation
P_ad
-
80
Collector-emitter breakdown voltage
V_(BR)CEO
30
-
OUTPUT Emitter-Collector breakdown voltage
V_(BR)ECO
5
-
Collector power dissipation
P_C
-
75
Total power dissipation
P_TOT
-
Operating Temperature Range
T_opr
Storage Temperature Range
T_stg
Lead Soldering Temperature (minimum 1.6mm from body) at 300 ^oC within 2 sec
100
-40^oC to + 85^oC
-40^oC to + 85^oC
@ T_A=25^oC
Unit
mA
V
mW
V
V
mW
mW
Unity Opto Technology Co., Ltd.
11/06/2003