MIR-3305-P Datasheet, PDF (1/3 Pages) Unity Opto Technology – SUBMINIATURE PHOTOINTERRUPTER

SUBMINIATURE
PHOTOINTERRUPTER
Description
The MIR-3305-P consists of a Gallium Arsenide in-
frared emitting diode and a NPN silicon phototran-
sistor built in a black plastic housing. It is a refl-
ective subminiature photointerrupter.
Package Dimensions
MIR-3305-P
Unit: mm
Features
Compact and thin
MIR-3305-P : Compact DIP, long lead type
Optimum detecting distance : 0.8 - 1.0 mm
Wavelength : 940nm
Visible light cut-off type
Flat lead type
E mitter
D
Anode
A
TOP VIE W
NOTE:
(1).Tolerance:±0.2mm
(2). ( ) Reference dimensions
C Collector
B Ca thode
Absolute Maximum Ratings
Parameter
Symbol Minimum Rating Maximum Rating
Continuous Forward Current
I_F
50
INPUT Reverse Voltage
V_R
5
Power Dissipation
P_ad
75
Collector-emitter breakdown voltage V_(BR)CEO
30
OUTPUT Emitter-Collector breakdown voltage V_(BR)ECO
5
Collector power dissipation
P_C
75
Total power dissipation
P_TOT
100
Operating Temperature Range
T_opr
-25 ^oC to + 85^oC
Storage Temperature Range
T_stg
-40 ^oC to + 100^oC
Lead Soldering Temperature (within 5 sec, minimum 1.6mm from body) at 260 ^oC
@ T_A=25^oC
Unit
mA
V
mW
V
V
mW
mW
Unity Opto Technology Co., Ltd.
12/10/2002