MIE-824L3 Datasheet, PDF (1/2 Pages) Unity Opto Technology – GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE

GaAs HIGH POWER T-1 3/4 PACKAGE
INFRARED EMITTING DIODE
MIE-824L3
Description
The MIE-824L3 is an infrared emitting diode utilizing
GaAs with AlGaAs window coation chip technology.
It is molded in water clear plastic package.
Package Dimensions
φ5.00
(.197)
Unit: inches
SEE NOTE 2
4.30
(.169)
5.80
(.228)
1.00
(.039)
FLAT DENOTES CATHODE
Features
l High radiant power and high radiant intesity
l Standard T-1 3/4 ( φ 5mm) package
l Peak wavelength λ_p = 940 nm
l Good spectral matching to si-photodetector
l Radiant angle: 80°
0.50 TYP.
(.020)
23.40 MIN.
(.921)
2.54 NOM.
(.100)
SEE NOTE 3
A
1.00MIN.
(.039)
C
Notes :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.5 mm (.059") max.
3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
Parameter
Power Dissipation
Peak Forward Current
Continuous Forward Current
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Maximum Rating
@ T_A=25^oC
Unit
120
mW
1
A
100
mA
5
V
-55^oC to +100^oC
-55^oC to +100^oC
260^oC for 5 seconds
Unity Opto Technology Co., Ltd.
02/04/2002