MIE-814A2 Datasheet, PDF (1/2 Pages) Unity Opto Technology – AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE

AlGaAs/GaAs T-1 3/4 PACKAGE
INFRARED EMITTING DIODE
MIE-814A2
Description
The MIE-814A2 is an infrared emitting diode utilizing
GaAs with AlGaAs window coating chip technology.
It is molded in water clear plastic package.
Package Dimensions
Unit: mm ( inches )
6.70±0.20
(.264±.008)
φ 5.00±0.20
(.197±.008)
1.30 max
(.051)
Features
2.00- 0.50
(.079) (.020)
28 typ
(1.102)
l High radiant power and high radiant intesity
l Suitable for DC and high pulse current operation
2.00±1.00
l Peak wavelength λ_P =940 nm
(.079±.039)
l Good spectral matching to Si-Photodetector
2.54NOM.
(.100)
C
A
NOTES :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.5 mm (.059") max.
3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
Parameter
Power Dissipation
Peak Forward Current
Continuous Forward Current
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Maximum Rating
@ T_A=25^oC
Unit
150
mW
1
A
100
mA
5
V
-55^oC to +100^oC
-55^oC to +100^oC
260^oC for 5 seconds
Unity Opto Technology Co., Ltd.
02/04/2002