MIE-544L3 Datasheet, PDF (1/2 Pages) Unity Opto Technology – GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE

GaAlAs HIGH POWER T-1 3/4 PACKAGE
INFRARED EMITTING DIODE
MIE-544L3
Description
The MIE-544L3 is an infrared emitting diode in GaAlAs
on GaAlAs technology molded in water clear plastic package.
Package Dimensions
φ5.05
(.200)
7.62
(.300)
1.00
(.040)
Unit : mm (inches )
5.47
(.215)
5.90
(.230)
FLAT DENOTES CATHODE
Features
l High radiant power and high radiant intesity
l Suitable for DC and high pulse current operation
l Standard T-1 3/4 (φ 5mm) package
l Peak wavelength λ_P =880 nm
l Good spectral matching to Si-Photodetecto
l Radiant angle : 40°
0.50 TYP.
(.020)
23.40 MIN.
(.920)
2.54
(.100)
1.00MIN
(.040)
A
C
Notes :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.5 mm (.059") max.
3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
Parameter
Power Dissipation
Peak Forward Current(300pps,10µs pulse)
Continuos Forward Current
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
'@ T_A=25^oC
Maximum Rating
Unit
120
mW
1
A
100
mA
5
V
-55^oC to +100^oC
-55^oC to +100^oC
260^oC for 5 seconds
Unity Opto Technology Co., Ltd.
11/17/2000