MIE-544A4 Datasheet, PDF (1/2 Pages) Unity Opto Technology – GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE

GaAs HIGH POWER T-1 3/4 PACKAGE
INFRARED EMITTING DIODE
Description
The MIE-544A4 is an infrared emitting diode utilizing
GaAs with AlGaAs window coating chip technology.
It is molded in water clear plastic package.
Package Dimensions
φ 5.05
(.199)
7.62
(.300)
SEE NOTE 2
1.00
(.039)
Features
l High radiant power and high radiant intesity
l Suitable for DC and high pulse current operation
l Standard T-1 3/4 ( φ5mm) package, radiant angle : 40°
l Peak wavelength λ_P =940 nm
l Good spectral matching to si-photodetecto
0.50 TYP.
(.020)
23.40 MIN.
(.921)
2.54 NOM.
(.100)
SEE NOTE 3
A
1.00MIN.
(.039)
C
MIE-544A4
Unit: mm(inch)
5.47
(.215)
5.90
(.230)
FLAT DENOTES CATHODE
Absolute Maximum Ratings
Parameter
Power Dissipation
Peak Forward Current
Continuous Forward Current
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Notes :
1. Tolerance is ±0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.5 mm (.059") max.
3. Lead spacing is measured where the leads emerge from the package.
@ T_A=25^oC
Maximum Rating
Unit
100
mW
1
A
50
mA
5
V
-55^oC to +100^oC
-55^oC to +100^oC
260^oC for 5 seconds
Unity Opto Technology Co., Ltd.
11/17/2000