MIE-534H4 Datasheet, PDF (1/2 Pages) Unity Opto Technology – GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE

GaAlAs HIGH POWER T-1 3/4 PACKAGE
INFRARED EMITTING DIODE
MIE-534H4
Description
The MIE-534H4 is a GaAlAs infrared LED having a
peak wavelength at 850nm. It features ultra-high power,
high response speed and molded package with higher
radiant intensity. In addition to improving the S/N ratio
in applied optical systems, the MIE-534H4 has greatly
improved long-distance characteristics as well as sign-
ificantly increased its range of applicability .
Package Dimensions
φ5.05
(.200)
Unit: mm (inches)
7.62
(.300)
5.90
(.230)
5.47
(.215)
SEE NOTE 2
1.00
(.040)
FLAT DENOTES CATHODE
Features
l Ultra-High radiant intensity
l High response speed
l Standard T-1 3/4 ( φ5mm) package
l Peak wavelength λ_P =850 nm
l Radiant angle : 30°
Application
l Data communication
l SIR
0.50 TYP.
(.020)
23.40 MIN
(.920)
2.54NOM.
(.100)
SEE NOTE 3
A
1.00MIN.
(.040)
C
Notes :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.5 mm (.059") max.
3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
Parameter
Power Dissipation
Peak Forward Current(300pps,10µs pulse)
Continuos Forward Current
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
'@ T_A=25^oC
Maximum Rating
Unit
120
mW
1
A
100
mA
5
V
-55^oC to +100^oC
-55^oC to +100^oC
260^oC for 5 seconds
Unity Opto Technology Co., Ltd.
11/17/2000