MIE-534A4 Datasheet, PDF (1/2 Pages) Unity Opto Technology – AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE

AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE
INFRARED EMITTING DIODE
MIE-534A4
Description
The MIE-534A4 is an infrared emitting diode utilizing
GaAs with AlGaAs window coating chip technology.
It is molded in water clear plastic package.
Package Dimensions
φ 5.05
(.199)
7.62
(.300)
Features
l High radiant power and high radiant intensity
SEE NOTE 2
l Suitable for DC and high pulse current operation
l Standard T-1 3/4 ( φ 5mm ) package, radiant angle : 30°
l Peak wavelength λ_p = 940 nm
l Good spectral matching to si-photodetector
0.50 TYP.
(.020)
1.00
(.039)
23.40 MIN.
(.921)
Unit: mm ( inches )
5.47
(.215)
5.90
(.230)
FLAT DENOTES CATHODE
2.54 NOM.
(.100)
SEE NOTE 3
A
1.00MIN.
(.039)
C
Absolute Maximum Ratings
Notes :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.5 mm (.059") max.
3. Lead spacing is measured where the leads emerge from the package.
@@T_AT=_A=2255^ooC
Parameter
Power Dissipation
Peak Forward Current(300pps,10µs pulse)
Continuos Forward Current
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Maximum Rating
Unit
120
mW
1
A
100
mA
5
V
-55^oC to +100^oC
-55^oC to +100^oC
260^oC for 5 seconds
Unity Opto Technology Co., Ltd.
11/20/2000