MIE-524A4 Datasheet, PDF (1/2 Pages) Unity Opto Technology – AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE

AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE
INFRARED EMITTING DIODE
MIE-524A4
Description
The MIE-524A4 is an infrared emitting diode utilizing
GaAs with AlGaAs window coating chip technology.
It is molded in water clear plastic package.
Package Dimensions
φ 5.05
(.200)
Unit : mm (inches )
7.62
(.300)
1.00
(.040)
5.47
(.215)
5.90
(.230)
FLAT DENOTES CATHODE
Features
l High radiant power and high radiant intensity
l Suitable for DC and high pulse current operation
l Standard T-1 3/4 ( φ 5mm ) package, radiation angle : 20°
l Peak wavelength λ_p = 940 nm
l Good spectral matching to si-photodetector
0.50 TYP.
(.020)
23.40 MIN.
(.920)
2.54
(.100)
1.00MIN
(.040)
A
C
Notes :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.5 mm (.059") max.
3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
Parameter
Power Dissipation
Peak Forward Current(300pps,10µs pulse)
Continuos Forward Current
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
'@ T_A=25^oC
Maximum Rating
Unit
120
mW
1
A
100
mA
5
V
-55^oC to +100^oC
-55^oC to +100^oC
260^oC for 5 seconds
Unity Opto Technology Co., Ltd.
11/17/2000