MIE-514H4 Datasheet, PDF (1/2 Pages) Unity Opto Technology – GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE

GaAlAs HIGH POWER T-1 3/4 PACKAGE
INFRARED EMITTING DIODE
MIE-514H4
Description
The MIE-514H4 is a GaAlAs infrared LED having
a peak wavelength at 850 nm . It feature ultra-high
power, high response speed and molded in water
clear plastic package, the MIE-514H4 have greatly
improved long-distance characteristics as well as
as significantly increased its range of applicability.
Features
Package Dimensions
φ5.05
(.200)
SEE NOTE 2
7.62
(.300)
1.00
(.040)
Unit: mm (inches)
5.47
(.215)
5.90
(.230)
FLAT DENOTES CATHODE
l Ultra-High radiant incidence
l High response speed
l High modulation bandwidth
l Standard T-1 3/4 ( φ 5mm ) package
l Radiation angle : 15°
l Peak wavelength λ_p = 850 nm
Applications
l Free air transmission systems with high -speed
response
0.50 TYP.
(.020)
23.40 MIN
(.920)
1.00MIN.
(.040)
2.54NOM.
(.100)
SEE NOTE 3
A
C
NOTES :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.5 mm (.059") max.
3. Lead spacing is measured where the leads emerge from the package.
l SIR
Absolute Maximum Ratings
Parameter
Power Dissipation
Peak Forward Current(300pps,10µs pulse)
Continuos Forward Current
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Maximum Rating
@ T_A=25^oC
Unit
120
mW
1
A
100
mA
5
V
-55^oC to +100^oC
-55^oC to +100^oC
260^oC for 5 seconds
Unity Opto Technology Co., Ltd.
11/17/2000