MIE-514A4 Datasheet, PDF (1/2 Pages) Unity Opto Technology – AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE

AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE
INFRARED EMITTING DIODE
MIE-514A4
Description
The MIE-514A4 is an infrared emitting diodes in
GaAs technology with AlGaAs window coating
encapsulated in water clear package.
Features
l High radiant power and high radiantintensity
l Standard T-1 3/4 ( φ 5mm) package
l Peak wavelength λ_p = 940 nm
l Good spectral matching to si-photodetector
l Radiant angle : 16°
Package Dimensions
φ5.05
(.200)
SEE NOTE 2
7.62
(.300)
1.00
(.040)
Unit: mm (inches)
5.47
(.215)
5.90
(.230)
FLAT DENOTES CATHODE
0.50 TYP.
(.020)
23.40 MIN
(.920)
2.54NOM.
(.100)
SEE NOTE 3
A
1.00MIN.
(.040)
C
Notes :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.5 mm (.059") max.
3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
Parameter
Power Dissipation
Peak Forward Current(300pps,10µs pulse)
Continuos Forward Current
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
@_@T_TAA=₌2₂5₅^oo_CC
Maximum Rating
Unit
120
mW
1
A
100
mA
5
V
-55^oC to +100^oC
-55^oC to +100^oC
260^oC for 5 seconds
Unity Opto Technology Co., Ltd.
11/17/2000