MIE-304G1 Datasheet, PDF (1/2 Pages) Unity Opto Technology – GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE

GaAs HIGH POWER T-1 PACKAGE
INFRARED EMITTING DIODE
Description
The MIE-304G1 is an infrared emitting diode in GaAs
technology molded in water clear plastic package.
Package Dimensions
3.00
(.118)
MIE-304G1
Unit : mm (inches )
Features
l Standard T-1 ( φ 3mm ) package, radiation angle : ±10°
l Peak wavelength λp = 940 nm
l Good spectral matching to si-photodetector
1.00
(.040)
5.25
(.207)
4.00
(.157)
0.80 ±0.50
(.031±.020)
FLAT DENOTES CATHODE
23.40MIN.
(.920)
0.50 TYP.
(.020)
2.54
(.100)
1.00MIN.
(.040)
A
C
Notes :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 0.8 mm (.031") max.
3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
Parameter
Power Dissipation
Peak Forward Current
Continuous Forward Current
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Maximum Rating
@ T_A=25^oC
Unit
120
mW
1
A
100
mA
5
V
-55^oC to +100^oC
-55^oC to +100^oC
260^oC for 5 seconds
Unity Opto Technology Co., Ltd.
02/04/2002