MIE-304A2 Datasheet, PDF (1/2 Pages) Unity Opto Technology – AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE

AlGaAs/GaAs HIGH POWER T-1 PACKAGE
INFRARED EMITTING DIODE
Description
The MIE-304A2 is a high power infrared eimtting
diode in GaAs technology with AlGaAs window
coating molded in water clear plastic package.
Package Dimensions
3.00
(.118)
MIE-304A2
Unit: mm (inches)
1.00
(.039)
SEE NOTE 2
5.25
(.207)
4.00
(.158)
0.80±0.50
(.032±.020)
FLAT DENOTES CATHODE
Features
l High radiant power and high radiant intensity
l Suitable for DC and high pulse current operation
l Standard T-1 ( φ 3mm) package, radiation angle: 25°
l Peak wavelength λp = 940 nm
l Good spectral matching to Si-Photodetector
23.40MIN.
(.921)
0.50 TYP.
(.020)
2.54 NOM.
(.100)
SEE NOTE 3
A
1.00 MIN.
(.040)
C
Notes :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 0.8 mm (.031") max.
3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
Parameter
Power Dissipation
Peak Forward Current
Continuous Forward Current
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Maximum Rating
@ T_A=25^oC
Unit
120
mW
1
A
100
mA
5
V
-55^oC to +100^oC
-55^oC to +100^oC
260^oC for 5 seconds
Unity Opto Technology Co., Ltd.
02/04/2002