MIE-184A4 Datasheet, PDF (1/2 Pages) Unity Opto Technology – GaAlAs/GaAs 1.8mm PACKAGE INFRARED EMITTING DIODE

GaAlAs/GaAs 1.8mm PACKAGE
INFRARED EMITTING DIODE
MIE-184A4
Description
The MIE-184A4 is a high power infrared eimtting
diode in GaAs technology with AlGaAs window
coating molded in water clear plastic package.
Package Dimensions
R 1.70
(.067)
φ1.80
(.071)
2.40
(.094)
Unit : mm (inches )
Features
l High radiant power and high radiant intensity
l Suitable for DC and high pulse current operation
l Special 1.8mm package, radiation angle: 35°
l Peak wavelength λp = 940 nm
l Good spectral matching to Si-Photodetector
Application
l Data communication
l SIR
3.00
(.118)
3.30
(.130)
SEE NOTE 2
1.40
(.055)
1.60
(.063)
25.40MIN.
(1.000)
0.50 TYP.
(.020)
1.00MIN
.
2.54 NOM. SEE NOTE 3
(.100)
A
C
Notes :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 0.4 mm (.015") max.
3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
Parameter
Power Dissipation
Peak Forward Current(300pps,10µs pulse)
Continuous Forward Current
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Maximum Rating
@ T_A=25^oC
Unit
100
mW
1
A
100
mA
5
V
-55^oC to +100^oC
-55^oC to +100^oC
260^oC for 5 seconds
Unity Opto Technology Co., Ltd.
02/04/2002