MIE-114A1 Datasheet, PDF (1/2 Pages) Unity Opto Technology – GaAlAs/GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE

GaAlAs/GaAs HIGH POWER SIDE LOOK PACKAGE
INFRARED EMITTING DIODE
MIE-114A1
Description
The MIE-114A1 is a GaAs infrared emitting diode
molded in clear, lensed side looking package .
The MIE-114A1 provides a broad range of
intensity selection .
Package Dimensions
4.45±0.20
(.175±.008)
2.22
((.0.08877))
5.72±0.2
(.225±.008)
Unit: mm ( inches )
1.22±0.10
(.048±.004)
0.76±0.10
(.030±.008)
1.55±0.02
(.061±.008)
Features
l Selected to specific on-line intensity and
radiant intensity ranges
l Low cost, plastic side looking package
l Mechanically and spectrally matched to
the MID-11422 of phototransistor .
12.7 MIN.
(.500)
1.0 MIN.
(.040)
C
0.5 TYP.
(.020)
2.54 NOM.
(.100)
SEE NOTE 3
A
NOTES :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.5 mm (.059") max.
3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
Parameter
Power Dissipation
Peak Forward Current(300pps,10µs pulse)
Continuos Forward Current
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
@ T_A=25^oC
Maximum Rating
Unit
75
mW
1
A
50
mA
5
V
-55^oC to +100^oC
-55^oC to +100^oC
260^oC for 5 seconds
Unity Opto Technology Co., Ltd.
02/04/2002