English
Language : 

UN2E6-75LSMD Datasheet, PDF (2/5 Pages) UN Semiconducctor INC – Surface Mount 2-Electrode Gas Discharge Tube (GDT)
Surface Mount 2-Electrode Gas Discharge Tube (GDT)
UN2E6-SMD Series
Device Dimensions (Unit: mm)
Recommended pad outline
Electrical Characteristics
Part Number
UN2E6-75LSMD
UN2E6-90LSMD
UN2E6-150LSMD
UN2E6-230LSMD
UN2E6-300LSMD
UN2E6-350LSMD
UN2E6-400LSMD
UN2E6-470LSMD
UN2E6-600LSMD
DC
Spark-over
Voltage
Maximum
Impulse
Spark-over
Voltage
Service Life
Maximum Arc Nominal
Max
Nominal
Minimum Capacitance Voltage Impulse Impulse Alternating
Insulation
Discharge Discharge Discharge
Resistance
Current Current Current
Impulse
Life
@100V/S @100V/μs @1KV/μs
@1MHz
@1A
@8/20μs @8/20μs
±5 times 1 time
@50Hz
1 Sec
10 times
@10/1000μs
300 times
75V±20%
500V 650V
1 GΩ
1.0pF
~15V
5KA
10KA
5A
(at 25V DC)
100A
90V±20%
500V 650V
1 GΩ
1.0pF
~15V
5KA
10KA
5A
(at 50V DC)
100A
150V±20% 500V 650V
1 GΩ
1.0pF
~20V
5KA
10KA
5A
(at 50V DC)
100A
230V±20% 600V 700V
1 GΩ
1.0pF
~20V
5KA
10KA
5A
(at 100V DC)
100A
300V±20% 700V 800V
1 GΩ
1.0pF
~20V
5KA
10KA
5A
(at 100V DC)
100A
350V±20% 700V 800V
1 GΩ
1.0pF
~20V
5KA
10KA
5A
(at 100V DC)
100A
400V±20% 800V 900V
1 GΩ
1.0pF
~20V
5KA
10KA
5A
(at 100V DC)
100A
470V±20% 900V 1000V
1 GΩ
1.0pF
~20V
5KA
10KA
5A
(at 100V DC)
100A
600V±20% 1100V 1200V
1 GΩ
1.0pF
~20V
5KA
10KA
5A
(at 100V DC)
100A
Notes:
1. Terms in accordance with ITU-T K.12 and GB/T 9043-2008
2. At delivery AQL 0.65 level Ⅱ, DIN ISO 2859
UN Semiconductor Co., Ltd.
Revision October 18, 2013
2/5
www.unsemi.com.tw
@SOCAY Electronics Co., Ltd. 2013
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.