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SLVU2.8 Datasheet, PDF (2/3 Pages) Semtech Corporation – Low Voltage EPD TVS Diode For ESD and Latch-Up Protection
Transient Voltage Suppressors Array for ESD Protection
SLVU2.8
Low Capacitance
Electrical Characteristics (@ 25℃ Unless Otherwise Specified )
Part Number
Device
Marking
VRWM
(V)
(Max.)
VB
(V)
(Min.)
IT
(mA)
VC
@5A
(Max.)
VC
(Max.) (@A)
IR
(μA)
(Max.)
C
(pF)
(Typ.)
SLVU2.8
328
2.8
3.0
1
7
20
24
1
3
Characteristic Curves
Fig1. 8/20μs Pulse Waveform
120
TEST
100
tr
Peak Value IPP WAVEFORM
PARAMETERS
tr=8μs
80
td=20μs
60
40
td=t IPP/2
20
0
0
5
10
15
20
25 30
t - Time (μs)
Fig3. Power Derating Curve
100
90
80
70
60
50
40
30
20
10
0
0
20 40 60 80 100 120 140 160 180 200
Ambient Temperature – TA (ºC)
Fig2. ESD Pulse Waveform (according to IEC 61000-4-2)
100%
90%
10%
tr = 0.7~1ns
30ns
60ns
Time (ns)
UN Semiconductor Co., Ltd.
Revision January 06, 2014
2/3
www.unsemi.com.tw
@ UN Semiconductor Co., Ltd. 2014
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.